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savantic semiconductor product specification silicon npn power transistors 2SC2809 d escription with to-3pn package high speed switching high breakdown voltage wide area of safe operation applications for power amplifier applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(t a =25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 300 v v ceo collector-emitter voltage open base 300 v v ebo emitter-base voltage open collector 6 v i c collector current 2 a i cm collector current-peak 4 a p c collector power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC2809 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 300 v v (br)cbo emitter-base breakdown voltage i c =1ma ;i e =0 300 v v ce (sat) collector-emitter saturation voltage i c =1.5a; i b =0.3a 1.0 v v be (sat) base-emitter saturation voltage i c =1.5a; i b =0.3a 1.5 v i cbo collector cut-off current v cb =300v i e =0 100 a i ebo emitter cut-off current v eb =6v; i c =0 100 a h fe dc current gain i c =0.3a ; v ce =4v 50 f t transition frequency i c =0.3a ; v ce =12v 20 mhz
savantic semiconductor product specification 3 silicon npn power transistors 2SC2809 package outline fig.2 outline dimensions

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